Improved thermal management of GaN/sapphire light-emitting diodes embedded in reflective heat spreaders

被引:52
作者
Horng, R. H. [1 ]
Chiang, C. C. [2 ]
Hsiao, H. Y. [2 ]
Zheng, X. [2 ]
Wuu, D. S. [2 ]
Lin, H. I. [3 ]
机构
[1] Natl Chung Hsing Univ, Inst Precis Engn, Taichung 40227, Taiwan
[2] Natl Chung Hsing Univ, Dept Mat Sci & Engn, Taichung 40227, Taiwan
[3] Liung Feng Ind Co Ltd, Taipei 23673, Taipei County, Taiwan
关键词
D O I
10.1063/1.2983740
中图分类号
O59 [应用物理学];
学科分类号
摘要
Using maskless lithography and electroforming techniques, we have demonstrated an enhanced performance of GaN/sapphire light-emitting diode (LED) embedded in a reflective copper heat spreader. The chip size and dominant wavelength of the blue emitter used in this research is 1 X 1 mm(2) and 455 nm, respectively. The cup-shaped LED heat sink is electroformed on sapphire directly using the spin-coated photoresist coated with the Au/Cr/Ag mirror as a mold and dicing into the embedded LED with a Cu base dimension of 3 X 3 mm(2), which effectively enhances the heat dissipation down to the metal frame and reaps the light flux generated from the side emission. With the aid of a reflective heat spreader, the encapsulated LED sample driven at 1 A yields the light output power of 700 mW and around 2.7-times increase in the wall-plug efficiency compared to that of the conventional GaN/sapphire LED. Infrared thermal images confirm the GaN/sapphire LED with more efficient heat extraction and better temperature uniformity. These results exhibit an alternative solution to thermal management of high power LED-on-sapphire samples besides the laser lift-off technique. (C) 2008 American Institute of Physics.
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页数:3
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