Vertical-conducting p-side-up GaN/mirror/Si light-emitting diodes by laser lift-off and wafer-transfer techniques

被引：14

作者：

Wuu, DS ^{[1
]}

Hsu, SC

Huang, SH

Horng, RH

机构：

[1] Natl Chung Hsing Univ, Dept Mat Engn, Taichung 402, Taiwan

[2] Natl Chung Hsing Univ, Inst Precis Engn, Taichung 402, Taiwan

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2004年 / 201卷 / 12期

关键词：

D O I：

10.1002/pssa.200405075

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A p-side-up GaN/Ag/Au-Sn/Si light-emitting diode (LED) has been fabricated by a combination of laser lift-off and wafer-transfer techniques. The Ag/Au-Sn mirror structure was chosen to favor high optical reflectivity, low contact resistance with n-GaN, vertical conducting, and low-temperature (similar to300 degreesC) wafer bonding. The GaN/Ag/Au-Sn/Si LED presented a maximum luminance intensity of 129 mcd (@ 20 mA) with a forward voltage of 3.3 V. The luminance intensity is over two times in magnitude as compared with that of the original planar GaN/sapphire LED. Under high current injection, the GaN/Ag/Au-Sn/Si LED also showed a more stable emission wavelength. This feature is attributed to the Si substrate providing a good heat sink. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：2699 / 2703

页数：5

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