Continuous-wave InGaN multiple-quantum-well laser diodes on copper substrates

被引：52

作者：

Wong, WS ^{[1
]}

Kneissl, M ^{[1
]}

Mei, P ^{[1
]}

Treat, DW ^{[1
]}

Teepe, M ^{[1
]}

Johnson, NM ^{[1
]}

机构：

[1] Xerox Corp, Palo Alto Res Ctr, Ctr Elect Mat, Palo Alto, CA 94304 USA

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 09期

关键词：

D O I：

10.1063/1.1350593

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Continuous-wave (cw) indium-gallium nitride multiple-quantum-well laser diodes (LDs) were transferred from sapphire onto copper substrates using a two-step laser lift-off process. Reduced threshold currents and increased differential quantum efficiencies were measured for LDs on Cu due to a 50% reduction of the thermal impedance. Light output for LDs on Cu was three times greater than comparable LDs on sapphire with a maximum output of 30 mW. CW operation was possible up to heatsink temperatures of 90 degreesC for LDs on Cu. (C) 2001 American Institute of Physics.

引用

页码：1198 / 1200

页数：3

共 10 条

[1] Large free-standing GaN substrates by hydride vapor phase epitaxy and laser-induced liftoff [J].

Kelly, MK ;

Vaudo, RP ;

Phanse, VM ;

Görgens, L ;

Ambacher, O ;

Stutzmann, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1999, 38 (3A) :L217-L219

[2] Continuous-wave operation of InGaN multiple quantum well laser diodes on copper substrates obtained by laser lift-off [J].

Kneissl, M ;

Wong, WS ;

Romano, LT ;

Treat, DW ;

Schmidt, T ;

Teepe, M ;

Johnson, NM .

2000 IEEE 17TH INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE, CONFERENCE DIGEST, 2000, :107-108

[3] Violet InGaN/GaN/AlGaN-based laser diodes with an output power of 420 mW [J].

Nakamura, S ;

Senoh, M ;

Nagahama, S ;

Iwasa, N ;

Yamada, T ;

Matsushita, T ;

Kiyoku, H ;

Sugimoto, Y ;

Kozaki, T ;

Umemoto, H ;

Sano, M ;

Chocho, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1998, 37 (6A) :L627-L629

[4] A vertical injection blue light emitting diode in substrate separated InGaN heterostructures [J].

Song, YK ;

Diagne, M ;

Zhou, H ;

Nurmikko, AV ;

Carter-Coman, C ;

Kern, RS ;

Kish, FA ;

Krames, MR .

APPLIED PHYSICS LETTERS, 1999, 74 (24) :3720-3722

[5]

Wong W., 1999, Compound Semiconductor, V5, P54

[6] InxGa1-xN light emitting diodes on Si substrates fabricated by Pd-In metal bonding and laser lift-off [J].

Wong, WS ;

Sands, T ;

Cheung, NW ;

Kneissl, M ;

Bour, DP ;

Mei, P ;

Romano, LT ;

Johnson, NM .

APPLIED PHYSICS LETTERS, 2000, 77 (18) :2822-2824

[7] Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off [J].

Wong, WS ;

Sands, T ;

Cheung, NW ;

Kneissl, M ;

Bour, DP ;

Mei, P ;

Romano, LT ;

Johnson, NM .

APPLIED PHYSICS LETTERS, 1999, 75 (10) :1360-1362

[8] Integration of GaN thin films with dissimilar substrate materials by Pd-In metal bonding and laser lift-off [J].

Wong, WS ;

Wengrow, AB ;

Cho, Y ;

Salleo, A ;

Quitoriano, NJ ;

Cheung, NW ;

Sands, T .

JOURNAL OF ELECTRONIC MATERIALS, 1999, 28 (12) :1409-1413

[9] Damage-free separation of GaN thin films from sapphire substrates [J].

Wong, WS ;

Sands, T ;

Cheung, NW .

APPLIED PHYSICS LETTERS, 1998, 72 (05) :599-601

[10]

Wong WS, 1998, ELEC SOC S, V98, P377

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