Migration of compensating defects in p-type ZnSe during annealing

被引：14

作者：

Chen, AL ^{[1
]}

Walukiewicz, W ^{[1
]}

Duxstad, K ^{[1
]}

Haller, EE ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY,DEPT MAT SCI & MINERAL ENGN,BERKELEY,CA 94720

来源：

APPLIED PHYSICS LETTERS | 1996年 / 68卷 / 11期

关键词：

D O I：

10.1063/1.115686

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We annealed p-type, nitrogen-doped ZnSe grown by molecular-beam epitaxy and subsequently characterized the samples by photoluminescence spectroscopy, capacitance-voltage profiling, and secondary ion mass spectroscopy. We found that the decrease in active acceptor concentration upon annealing stems from compensation by defects that originate from the surface. By fitting the nitrogen acceptor profiles with solutions of the diffusion equation, we estimate the migration energy of the compensating defect to be 4.0+/-0.3 eV. (C) 1996 American Institute of Physics.

引用

页码：1522 / 1524

页数：3

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