Growth of crystalline praseodymium oxide on silicon

被引：37

作者：

Osten, HJ ^{[1
]}

Liu, JP ^{[1
]}

Bugiel, E ^{[1
]}

Müssig, HJ ^{[1
]}

Zaumseil, P ^{[1
]}

机构：

[1] IHP, D-15236 Frankfurt, Germany

来源：

JOURNAL OF CRYSTAL GROWTH | 2002年 / 235卷 / 1-4期

关键词：

molecular beam epitaxy; oxides; rare earth compounds; dielectric materials;

D O I：

10.1016/S0022-0248(01)01777-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We present the results for crystalline growth of praseodymium oxide on Si as a potential high-K dielectric with promising electrical properties. All layer growth experiments were performed using solid source molecular beam epitaxy. The initial stages of growth were studied by scanning tunneling microscopy. On Si(0 0 1) surfaces, crystalline Pr2O3 grows as (1 1 0)-domains, with two orthogonal in-plane orientations. Epitaxial silicon overgrowth seems to be impossible. We obtain perfect epitaxial growth on Si(1 1 1). These layers can also be overgrown epitaxially with silicon. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：229 / 234

页数：6

共 20 条

[1] Room-temperature epitaxial growth of CeO2(001) thin films on Si(001) substrates by electron beam evaporation [J].

Ami, T ;

Ishida, Y ;

Nagasawa, N ;

Machida, A ;

Suzuki, M .

APPLIED PHYSICS LETTERS, 2001, 78 (10) :1361-1363

[2] Scaling the gate dielectric: Materials, integration, and reliability [J].

Buchanan, DA .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1999, 43 (03) :245-264

[3] XTEM sample preparation for failure analysis in semiconductor devices using high energy ion beam thinning [J].

Bugiel, E .

SPECIMEN PREPARATION FOR TRANSMISSION ELECTRON MICROSCOPY OF MATERIALS IV, 1997, 480 :89-95

[4] Temperature dependence of the properties of heteroepitaxial Y2O3 films grown on Si by ion assisted evaporation [J].

Cho, MH ;

Ko, DH ;

Jeong, K ;

Lyo, IW ;

Whangbo, SW ;

Kim, HB ;

Choi, SC ;

Song, JH ;

Cho, SJ ;

Whang, CN .

JOURNAL OF APPLIED PHYSICS, 1999, 86 (01) :198-204

[5] Epitaxial growth of Y2O3 films on Si(100) without an interfacial oxide layer [J].

Choi, SC ;

Cho, MH ;

Whangbo, SW ;

Whang, CN ;

Kang, SB ;

Lee, SI ;

Lee, MY .

APPLIED PHYSICS LETTERS, 1997, 71 (07) :903-905

[6]

Dabrowski J., 2000, Silicon Surfaces and Formation of Interfaces: Basic Science in the Industrial World

[7] GROWTH OF EPITAXIAL PRO2 THIN-FILMS ON HYDROGEN TERMINATED SI (111) BY PULSED LASER DEPOSITION [J].

FORK, DK ;

FENNER, DB ;

GEBALLE, TH .

JOURNAL OF APPLIED PHYSICS, 1990, 68 (08) :4316-4318

[8] HETEROEPITAXIAL GROWTH OF Y2O3 FILMS ON SILICON [J].

FUKUMOTO, H ;

IMURA, T ;

OSAKA, Y .

APPLIED PHYSICS LETTERS, 1989, 55 (04) :360-361

[9] GROWTH OF BUFFER LAYERS ON SI SUBSTRATE FOR HIGH-TC SUPERCONDUCTING THIN-FILMS [J].

HARADA, K ;

NAKANISHI, H ;

ITOZAKI, H ;

YAZU, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (05) :934-938

[10]

HELLWEGE KH, 1955, LANDOLTBORNSTEIN, V4

← 1 2 →