Indium incorporation dynamics into AIInN ternary alloys for laser structures lattice matched to GaN

被引：54

作者：

Schenk, H. P. D. ^{[1
]}

Nemoz, M. ^{[1
]}

Korytov, M. ^{[1
]}

Vennegues, P. ^{[1
]}

Draeger, A. D. ^{[2
]}

Hangleiter, A. ^{[2
]}

机构：

[1] CNRS, CRHEA, F-06560 Valbonne, Prouvenco, France

[2] Tech Univ Carolo Wilhelmina Braunschweig, Inst Appl Phys, D-38106 Braunschweig, Germany

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 08期

关键词：

D O I：

10.1063/1.2971027

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Al1-xInxN ternary alloys with solid phase indium compositions between x=0.15 and 0.28 have been grown by metal organic chemical vapor deposition under indium rich conditions within the growth temperature range of 750-810 degrees C. A thermally activated process with activation energy of 1.05 +/- 0.05 eV is found to compete with indium incorporation. Smooth epitaxial layers with root mean-squares surface roughness of 0.3-0.8 nm are obtained. (Al,In)N films lattice matched to GaN have been introduced into laser diode structures for optical confinement. Optical gain is observed. (C) 2008 American Institute of Physics.

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页数：3

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