Progresses in III-nitride distributed Bragg reflectors and microcavities using AlInN/GaN materials

被引：145

作者：

Carlin, JF ^{[1
]}

Zellweger, C ^{[1
]}

Dorsaz, J ^{[1
]}

Nicolay, S ^{[1
]}

Christmann, G ^{[1
]}

Feltin, E ^{[1
]}

Butté, R ^{[1
]}

Grandjean, N ^{[1
]}

机构：

[1] Ecole Polytech Fed Lausanne, Inst Quantum Elect & Photon, CH-1015 Lausanne, Switzerland

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2005年 / 242卷 / 11期

关键词：

D O I：

10.1002/pssb.200560968

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We propose to use lattice-matched AlInN/GaN to replace the Al(Ga)N/GaN material system for III-nitride Bragg reflectors, despite the poor material quality of AlInN reported until very recently. We report an improvement of AlInN material that allowed for successful fabrication of a microcavity light emitting diode, a distributed Bragg reflector with 99.4% reflectivity and microcavities with a quality factor over 800. These results establish state-of-the-art values for III-nitrides, and announce the future importance of AlInN in GaN-based optoelectronics. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：2326 / 2344

页数：19

共 43 条

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