Hydrogen response mechanism of Pt-GaN Schottky diodes

被引：183

作者：

Schalwig, J ^{[1
]}

Müller, G

Karrer, U

Eickhoff, M

Ambacher, O

Stutzmann, M

Görgens, L

Dollinger, G

机构：

[1] EADS Deutschland GmbH, Corp Res Ctr, D-81663 Munich, Germany

[2] Munchen Univ Technol, Walter Schottky Inst, D-85748 Garching, Germany

[3] Munchen Univ Technol, Dept Phys, D-85748 Garching, Germany

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 07期

基金：

美国国家卫生研究院;

关键词：

D O I：

10.1063/1.1450044

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Besides silicon carbide, group-III nitrides are also suitable large-band-gap semiconductor materials for high-temperature gas sensor devices. Exposing GaN-based Schottky diodes with catalytically active platinum electrodes to hydrogen, we observed a decrease of the rectifying characteristics which we attribute to a decrease in Schottky barrier height. Current-voltage and elastic recoil detection measurements were used to investigate the H-sensing behavior of such devices. Our results indicate an interfacial effect as the origin of the sensor response to hydrogen. (C) 2002 American Institute of Physics.

引用

页码：1222 / 1224

页数：3

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