Combinatorial Approach to the Fabrication of Zinc-Tin-Oxide Transparent Thin-Film Transistors

被引：9

作者：

Cheong, Woo-Seok ^{[1
]}

Yoon, Sung-Min ^{[1
]}

Shin, Jae-Heon ^{[1
]}

Hwang, Chi-Sun ^{[1
]}

机构：

[1] Elect & Telecommun Res Inst, Transparent Elect Team, Taejon 305700, South Korea

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2009年 / 54卷 / 01期

关键词：

Zn-Sn-Oxide; ZTO; Combinatorial method; Transparent thin-film transistor;

D O I：

10.3938/jkps.54.544

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Zn-Sn-O (ZTO) thin films were prepared for channels in top-gate transparent thin-film transistors (TTFTs). Thin ZTO films (similar to 20 nm) with a wide range of compositions could be easily formed by rising a combinatorial method with two RF magnetron sputter guns equipped with ZnO and SnO2 targets. Specially, ZTO-TTFTs could be fabricated by using low thermal processes at temperatures below 300 degrees C, where electrical properties were improved by controlling both the deposition rate and the temperature. In ZTO films with a compositional zone from [Zn : Sn = similar to 4 : 1] to [Zn : Sn = similar to 2 : 1] and amorphous-like structures, reliable transfer plots with high I-on/I-off of ratios (> 10(7)) could be obtained.

引用

页码：544 / 548

页数：5

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