Room temperature polariton lasing in a GaN/AlGaN multiple quantum well microcavity

被引:262
作者
Christmann, Gabriel [1 ]
Butte, Raphael [1 ]
Feltin, Eric [1 ]
Carlin, Jean-Francois [1 ]
Grandjean, Nicolas [1 ]
机构
[1] Ecole Polytech Fed Lausanne, Inst Quantum Elect & Photon, CH-1015 Lausanne, Switzerland
关键词
D O I
10.1063/1.2966369
中图分类号
O59 [应用物理学];
学科分类号
摘要
The authors report room temperature polariton lasing at lambda similar to 345 nm in a hybrid AlInN/AlGaN multiple quantum well microcavity (MQW-MC) containing a GaN/AlGaN MQW active region, i.e., the achievement under nonresonant optical excitation of coherent light emission of a macroscopic population of polaritons occupying the lowest energy state of the lower polariton branch. This was made possible by taking advantage of the efficient relaxation of polaritons in a MQW-MC exhibiting a large vacuum Rabi splitting Omega(VRS)=56 meV. (c) 2008 American Institute of Physics.
引用
收藏
页数:3
相关论文
共 20 条
[11]   Bose-Einstein condensation of exciton polaritons [J].
Kasprzak, J. ;
Richard, M. ;
Kundermann, S. ;
Baas, A. ;
Jeambrun, P. ;
Keeling, J. M. J. ;
Marchetti, F. M. ;
Szymanska, M. H. ;
Andre, R. ;
Staehli, J. L. ;
Savona, V. ;
Littlewood, P. B. ;
Deveaud, B. ;
Dang, Le Si .
NATURE, 2006, 443 (7110) :409-414
[12]   Electroluminescence emission from polariton states in GaAs-based semiconductor microcavities [J].
Khalifa, A. A. ;
Love, A. P. D. ;
Krizhanovskii, D. N. ;
Skolnick, M. S. ;
Roberts, J. S. .
APPLIED PHYSICS LETTERS, 2008, 92 (06)
[13]   CW lasing of current injection blue GaN-based vertical cavity surface emitting laser [J].
Lu, Tien-Chang ;
Kao, Chih-Chiang ;
Kuo, Hao-Chung ;
Huang, Gen-Sheng ;
Wang, Shing-Chung .
APPLIED PHYSICS LETTERS, 2008, 92 (14)
[14]   Room-temperature polariton lasers based on GaN microcavities [J].
Malpuech, G ;
Di Carlo, A ;
Kavokin, A ;
Baumberg, JJ ;
Zamfirescu, M ;
Lugli, P .
APPLIED PHYSICS LETTERS, 2002, 81 (03) :412-414
[15]   Recent progress of AlInGaN laser diodes [J].
Nagahama, SI ;
Sugimoto, Y ;
Kozaki, T ;
Mukai, T .
Novel In-Plane Semiconductor Lasers IV, 2005, 5738 :57-62
[16]   Strong coupling phenomena in quantum microcavity structures [J].
Skolnick, MS ;
Fisher, TA ;
Whittaker, DM .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1998, 13 (07) :645-669
[17]   Polariton relaxation bottleneck and its thermal suppression in bulk GaN microcavities [J].
Stokker-Cheregi, F. ;
Vinattieri, A. ;
Semond, F. ;
Leroux, M. ;
Sellers, I. R. ;
Massies, J. ;
Solnyshkov, D. ;
Malpuech, G. ;
Colocci, M. ;
Gurioli, M. .
APPLIED PHYSICS LETTERS, 2008, 92 (04)
[18]   Exciton-exciton scattering dynamics in a semiconductor microcavity and stimulated scattering into polaritons [J].
Tassone, F ;
Yamamoto, Y .
PHYSICAL REVIEW B, 1999, 59 (16) :10830-10842
[19]   A GaAs polariton light-emitting diode operating near room temperature [J].
Tsintzos, S. I. ;
Pelekanos, N. T. ;
Konstantinidis, G. ;
Hatzopoulos, Z. ;
Savvidis, P. G. .
NATURE, 2008, 453 (7193) :372-375
[20]   OBSERVATION OF THE COUPLED EXCITON-PHOTON MODE SPLITTING IN A SEMICONDUCTOR QUANTUM MICROCAVITY [J].
WEISBUCH, C ;
NISHIOKA, M ;
ISHIKAWA, A ;
ARAKAWA, Y .
PHYSICAL REVIEW LETTERS, 1992, 69 (23) :3314-3317