CW lasing of current injection blue GaN-based vertical cavity surface emitting laser

被引:239
作者
Lu, Tien-Chang
Kao, Chih-Chiang
Kuo, Hao-Chung
Huang, Gen-Sheng
Wang, Shing-Chung [1 ]
机构
[1] Natl Chiao Tung Univ, Dept Photon, Hsinchu 300, Taiwan
[2] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 300, Taiwan
关键词
D O I
10.1063/1.2908034
中图分类号
O59 [应用物理学];
学科分类号
摘要
Here, we report the cw laser operation of electrically pumped GaN-based vertical cavity surface emitting laser (VCSEL). The GaN-based VCSEL has a ten-pair InGaN/GaN multiple quantum well active layer embedded in a GaN hybrid microcavity of 5 lambda optical thickness with two high reflectivity mirrors provided by an epitaxially grown AlN/GaN distributed Bragg reflector (DBR) and a Ta2O5/SiO2 dielectric DBR. cw laser action was achieved at a threshold injection current of 1.4 mA at 77 K. The laser emitted a blue wavelength at 462 nm with a narrow linewidth of about 0.15 nm. The laser beam has a divergence angle of about 11.7 degrees with a polarization ratio of 80%. A very strong spontaneous coupling efficiency of 7.5x10(-2) was measured. (C) 2008 American Institute of Physics.
引用
收藏
页数:3
相关论文
共 10 条
[1]   Emission characteristics of optically pumped GaN-based vertical-cavity surface-emitting lasers [J].
Chu, Jung-Tang ;
Lu, Tien-Chang ;
You, Min ;
Su, Bor-Jye ;
Kao, Chih-Chiang ;
Kuo, Hao-Chung ;
Wang, Shing-Chung .
APPLIED PHYSICS LETTERS, 2006, 89 (12)
[2]   GAAS MICROCAVITY QUANTUM-WELL LASER WITH ENHANCED COUPLING OF SPONTANEOUS EMISSION TO THE LASING MODE [J].
HOROWICZ, RJ ;
HEITMANN, H ;
KADOTA, Y ;
YAMAMOTO, Y .
APPLIED PHYSICS LETTERS, 1992, 61 (04) :393-395
[3]   Crack-free GaN/AlN distributed Bragg reflectors incorporated with GaN/AlN superlattices grown by metalorganic chemical vapor deposition [J].
Huang, GS ;
Lu, TC ;
Yao, HH ;
Kuo, HC ;
Wang, SC ;
Lin, CW ;
Chang, L .
APPLIED PHYSICS LETTERS, 2006, 88 (06)
[4]   Observation of enhanced spontaneous emission coupling factor in nitride-based vertical-cavity surface-emitting laser [J].
Kako, S ;
Someya, T ;
Arakawa, Y .
APPLIED PHYSICS LETTERS, 2002, 80 (05) :722-724
[5]   Fabrication and performance of blue GaN-based vertical-cavity surface emitting laser employing AlN/GaN and Ta2O5/SiO2 distributed Bragg reflector -: art. no. 081105 [J].
Kao, CC ;
Peng, YC ;
Yao, HH ;
Tsai, JY ;
Chang, YH ;
Chu, JT ;
Huang, HW ;
Kao, TT ;
Lu, TC ;
Kuo, HC ;
Wang, SC ;
Lin, CF .
APPLIED PHYSICS LETTERS, 2005, 87 (08)
[6]   Room temperature lasing at blue wavelengths in gallium nitride microcavities [J].
Someya, T ;
Werner, R ;
Forchel, A ;
Catalano, M ;
Cingolani, R ;
Arakawa, Y .
SCIENCE, 1999, 285 (5435) :1905-1906
[7]   A quasicontinuous wave, optically pumped violet vertical cavity surface emitting laser [J].
Song, YK ;
Zhou, H ;
Diagne, M ;
Nurmikko, AV ;
Schneider, RP ;
Kuo, CP ;
Krames, MR ;
Kern, RS ;
Carter-Coman, C ;
Kish, FA .
APPLIED PHYSICS LETTERS, 2000, 76 (13) :1662-1664
[8]   Low-threshold lasing of InGaN vertical-cavity surface-emitting lasers with dielectric distributed Bragg reflectors [J].
Tawara, T ;
Gotoh, H ;
Akasaka, T ;
Kobayashi, N ;
Saitoh, T .
APPLIED PHYSICS LETTERS, 2003, 83 (05) :830-832
[9]   Microscopic analysis of optical gain in InGaN/GaN quantum wells -: art. no. 021104 [J].
Witzigmann, B ;
Laino, V ;
Luisier, M ;
Schwarz, UT ;
Feicht, G ;
Wegscheider, W ;
Engl, K ;
Furitsch, M ;
Leber, A ;
Lell, A ;
Härle, V .
APPLIED PHYSICS LETTERS, 2006, 88 (02) :1-3
[10]   MICROCAVITY SEMICONDUCTOR-LASER WITH ENHANCED SPONTANEOUS EMISSION [J].
YAMAMOTO, Y ;
MACHIDA, S ;
BJORK, G .
PHYSICAL REVIEW A, 1991, 44 (01) :657-668