Microscopic analysis of optical gain in InGaN/GaN quantum wells -: art. no. 021104

被引：67

作者：

Witzigmann, B ^{[1
]}

Laino, V

Luisier, M

Schwarz, UT

Feicht, G

Wegscheider, W

Engl, K

Furitsch, M

Leber, A

Lell, A

Härle, V

机构：

[1] ETH, Integrated Syst Lab, CH-8092 Zurich, Switzerland

[2] Univ Regensburg, D-93040 Regensburg, Germany

[3] Osram Opto Semiconductors GmbH, D-93055 Regensburg, Germany

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 02期

关键词：

D O I：

10.1063/1.2164907

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A microscopic theory is used to analyze optical gain in InGaN/GaN quantum wells (QW). Experimental data are obtained from Hakki-Paoli measurements on edge-emitting lasers for different carrier densities. The simulations are based on the solution of the quantum kinetic Maxwell-Bloch equations, including many-body effects and a self-consistent treatment of piezoelectric fields. The results confirm the validity of a QW gain description for this material system with a substantial inhomogeneous broadening due to structural variation. They also give an estimate of the nonradiative recombination rate. (c) 2006 American Institute of Physics.

引用

页码：1 / 3

页数：3

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