Indium redistribution in an InGaN quantum well induced by electron-beam irradiation in a transmission electron microscope

被引：44

作者：

Li, T

Hahn, E

Gerthsen, D

Rosenauer, A

Strittmatter, A

Reissmann, L

Bimberg, D

机构：

[1] Univ Karlsruhe, Lab Elect Mikroskopie, D-76128 Karlsruhe, Germany

[2] Univ Bremen, Inst Festkorperphys, D-28359 Bremen, Germany

[3] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 24期

关键词：

D O I：

10.1063/1.1948517

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The change of the morphology and indium distribution in an In0.12Ga0.88N quantum well embedded in GaN was investigated depending on the duration of electron-beam irradiation in a transmission electron microscope. Strain-state analysis based on high-resolution lattice-fringe images was used to determine quantitatively the local and average indium concentration of the InGaN quantum well. In-rich clusters were found already in the first image taken after 20 s of irradiation. The indium concentration in the clusters tends to increase with prolonged irradiation time. In contrast, the locally averaged indium concentration and the quantum-well width do not change within the first minute. (c) 2005 American Institute of Physics.

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页码：1 / 3

页数：3

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