Quantum-well-width dependencies of postgrowth thermal annealing effects of InGaN/GaN quantum wells

被引：37

作者：

Chung, YY

Lin, YS

Feng, SW

Cheng, YC

Lin, EC

Yang, CC

Ma, KJ

Hsu, C

Chuang, HW

Kuo, CT

Tsang, JS

机构：

[1] Natl Taiwan Univ, Grad Inst Electroopt Engn, Taipei 10764, Taiwan

[2] Natl Taiwan Univ, Dept Elect Engn, Taipei 10764, Taiwan

[3] Chinese Naval Acad, Dept Elect Engn, Kaohsiung, Taiwan

[4] Natl Def Univ, Chung Cheng Inst Technol, Dept Mech Engn, Taoyuan, Taiwan

[5] Adv Epitaxy Technol Inc, Hsinchu, Taiwan

[6] Chung Hua Univ, Dept Mech Engn, Hsinchu, Taiwan

来源：

JOURNAL OF APPLIED PHYSICS | 2003年 / 93卷 / 12期

关键词：

D O I：

10.1063/1.1576514

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Optical measurements of temperature-dependent photoluminescence (PL) spectral peak, integrated PL intensity and PL decay time, and microstructure analyses with high-resolution transmission electron microscopy showed the strong dependencies of thermal annealing effects on quantum well (QW) width in InGaN/GaN QW structures. With different QW widths, different levels of strain energy were built. Upon thermal annealing, energy relaxation resulted in the reshaping of quantum dots and hence the changes of optical properties. Thermal annealing at 800 degreesC of a narrow QW width (2 nm) structure led to regularly distributed quantum dots (QDs) and improved optical quality. However, thermal annealing at the same temperature of a sample of larger QW width (4 nm) did not show QD formation. In this situation, even higher local strains around QWs were speculated. Also, degraded optical quality was observed. (C) 2003 American Institute of Physics.

引用

页码：9693 / 9696

页数：4

共 17 条

[1] Influence of the quantum-well thickness on the radiative recombination of InGaN/GaN quantum well structures [J].