Multiple-component photoluminescence decay caused by carrier transport in InGaN/GaN multiple quantum wells with indium aggregation structures

被引：47

作者：

Feng, SW

Cheng, YC

Chung, YY

Yang, CC

Mao, MH

Lin, YS

Ma, KJ

Chyi, JI

机构：

[1] Natl Taiwan Univ, Dept Elect Engn, Taipei 10764, Taiwan

[2] Natl Taiwan Univ, Grad Inst Electroopt Engn, Taipei 10764, Taiwan

[3] Chung Cheng Inst Technol, Dept Engn Mech, Tao Yuan, Taiwan

[4] Natl Cent Univ, Dept Elect Engn, Chungli 32054, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 23期

关键词：

D O I：

10.1063/1.1484546

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Based on wavelength-dependent and temperature-varying time-resolved photoluminescence (PL) measurements, the mechanism of carrier transport among different levels of localized states (spatially distributed) in an InGaN/GaN quantum well structure was proposed for interpreting the early-stage fast decay, delayed slow rise, and extended slow decay of PL intensity. The process of carrier transport was enhanced with a certain amount of thermal energy for overcoming potential barriers between spatially distributed potential minimums. With carrier supply in the carrier transport process, the extended PL decay time at wavelengths corresponding to deeply localized states can be as large as 80 ns. (C) 2002 American Institute of Physics.

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页码：4375 / 4377

页数：3

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