Effects of Si-doping in the barriers on the recombination dynamics in In0.15Ga0.85N/In0.015Ga0.985N quantum wells

被引：18

作者：

Ryu, MY ^{[1
]}

Yu, PW

Shin, EJ

Lee, JI

Yu, SK

Oh, E

Nam, OH

Sone, CS

Park, YJ

机构：

[1] Kwangju Inst Sci & Technol, Dept Informat & Commun, Kwangju 500712, South Korea

[2] Korea Res Inst Stand & Sci, Optoelect Grp, Taejon 305600, South Korea

[3] Samsung Adv Inst Technol, Compound Semicond Lab, Suwon 440600, South Korea

来源：

JOURNAL OF APPLIED PHYSICS | 2001年 / 89卷 / 01期

关键词：

D O I：

10.1063/1.1331077

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A systematic study of time-resolved photoluminescence spectra from In0.15Ga0.85N/In0.015Ga0.985N quantum wells (QWs) with different Si-doping concentration in the barriers has been carried out. The 10 K recombination lifetimes in the QWs depend strongly on the Si-doping in the barriers, decreasing from similar to 80 to similar to 20 ns as the Si-doping level increases from 2 x 10(18) to 1 x 10(19) cm(-3). The separation between the spontaneous and stimulated emission (SE) peaks and a shift of the emission peak to longer wavelengths with delay time after a pulsed excitation decrease with increasing Si doping. The increased recombination rate, the decrease of peak shift with delay time, and the reduced separation between the spontaneous and SE peaks with increasing Si doping are attributed to the screening of piezoelectric field by carriers originated from Si-doped barriers. (C) 2001 American Institute of Physics.

引用

页码：634 / 637

页数：4

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