Optical properties of InGaN/GaN quantum wells with Si doped barriers

被引：39

作者：

Minsky, MS ^{[1
]}

Chichibu, S

Fleischer, SB

Abare, AC

Bowers, JE

Hu, EL

Keller, S

Mishra, UK

DenBaars, SP

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[3] Sci Univ Tokyo, Fac Sci & Technol, Noda, Chiba 278, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1998年 / 37卷 / 11B期

关键词：

InGaN; GaN; multi-quantum wells; Si; doping; photoluminescence;

D O I：

10.1143/JJAP.37.L1362

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Optical properties of InGaN/GaN multi-quantum wells with Si doped barriers are studied using cw and time resolved photoluminescence (TRPL) and photoluminescence excitation (PLE) spectroscopy. The room temperature carrier lifetime depends strongly on the Si doping level in the quantum well barriers, decreasing from 10 ns to ins as the doping level is increased from unintentionally doped to 5 x 10(18) cm(-3) (Si:GaN). The shift between the absorption edge and emission peak decreases from 220 meV to 110 meV as the doping is increased. Temperature dependent photoluminescence measurements indicate a higher density of non-radiative centers in the undoped structures.

引用

页码：L1362 / L1364

页数：3

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