SI-DOPED INGAN FILMS GROWN ON GAN FILMS

被引：61

作者：

NAKAMURA, S

MUKAI, T

SENOH, M

机构：

[1] Department of Research and Development, Nichia Chemical Industries Ltd., Tokushima, 774, 491 Oka, Kaminaka, Anan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1993年 / 32卷 / 1A-B期

关键词：

SI-DOPED INGAN; GAN; X-RAY ROCKING CURVE; BLUE BAND-EDGE EMISSION; PHOTOLUMINESCENCE; MG-DOPED GAN;

D O I：

10.1143/JJAP.32.L16

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-quality Si-doped InGaN films were grown on GaN films for the first time. Strong and sharp band-edge BE emissions were observed at peak wavelengths between 400 nm and 425 nm, while deep-level emissions were not observed in photoluminescence (PL) measurements at room temperature. The intensity of BE emissions of Si-doped InGaN films was about 36 times stronger than that of undoped InGaN films and 20 times stronger than that of the blue emission (at 450 nm) of Mg-doped p-type GaN films. The smallest full width at half-maximum (FWHM) of the double-crystal X-ray rocking curve (XRC) from the Si-doped InGaN films was 6.4 minutes. This value of FWHM was the smallest ever reported for InGaN films.

引用

页码：L16 / L19

页数：4

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