Properties of InGaN quantum-well heterostructures grown on sapphire by metalorganic chemical vapor deposition

被引：34

作者：

Grudowski, PA ^{[1
]}

Eiting, CJ ^{[1
]}

Park, J ^{[1
]}

Shelton, BS ^{[1
]}

Lambert, DJH ^{[1
]}

Dupuis, RD ^{[1
]}

机构：

[1] UNIV TEXAS,MICROELECT RES CTR,AUSTIN,TX 78712

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 11期

关键词：

D O I：

10.1063/1.119959

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the growth and characterization of InGaN heteroepitaxial thin films and quantum-well heterostructures on (0001) sapphire substrates. The III-N heteroepitaxial layers are grown by metalorganic chemical vapor deposition on sapphire substrates using various growth conditions. A comparison of the 300 K photoluminescence (PL) spectra of the samples indicates that a higher PL intensity is measured for the quantum-well structures having an intentional n-type Si-doping concentration. Furthermore, three-, five-, and eight-period InGaN quantum-well structures exhibit similar narrow PL spectra. (C) 1997 American Institute of Physics.

引用

页码：1537 / 1539

页数：3

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