Fabrication and performance of blue GaN-based vertical-cavity surface emitting laser employing AlN/GaN and Ta2O5/SiO2 distributed Bragg reflector -: art. no. 081105

被引:62
作者
Kao, CC
Peng, YC
Yao, HH
Tsai, JY
Chang, YH
Chu, JT
Huang, HW
Kao, TT
Lu, TC
Kuo, HC
Wang, SC [1 ]
Lin, CF
机构
[1] Natl Chiao Tung Univ, Dept Photon, Hsinchu 300, Taiwan
[2] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 300, Taiwan
[3] Natl Chung Hsing Univ, Dept Mat Engn, Taichung 400, Taiwan
关键词
D O I
10.1063/1.2032598
中图分类号
O59 [应用物理学];
学科分类号
摘要
GaN-based vertical-cavity surface emitting laser with 3 lambda cavity and hybrid mirrors, consisting of the 25 pairs AlN/GaN dielectric Bragg reflector and the 8 pairs Ta2O5/SiO2, was fabricated. The laser action was achieved under the optical pumping at room temperature with a threshold pumping energy density of about 53 mJ/cm(2). The laser emits 448 nm blue wavelength with a linewidth of 0.25 nm and the laser beam has a degree of polarization of about 84%. (c) 2005 American Institute of Physics.
引用
收藏
页数:3
相关论文
共 15 条
[1]  
IGA K, 1996, P 1 INT S BLUE LAS L
[2]   Crack-free and conductive Si-doped AlN/GaN distributed Bragg reflectors grown on 6H-SiC(0001) [J].
Ive, T ;
Brandt, O ;
Kostial, H ;
Hesjedal, T ;
Ramsteiner, M ;
Ploog, KH .
APPLIED PHYSICS LETTERS, 2004, 85 (11) :1970-1972
[3]   Characteristics of stable emission GaN-based resonant-cavity light-emitting diodes [J].
Lin, CF ;
Yao, HH ;
Lu, JW ;
Hsieh, YL ;
Kuo, HC ;
Wang, SC .
JOURNAL OF CRYSTAL GROWTH, 2004, 261 (2-3) :359-363
[4]   InGaN-based blue laser diodes [J].
Nakamura, S .
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1997, 3 (03) :712-718
[5]   CANDELA-CLASS HIGH-BRIGHTNESS INGAN/ALGAN DOUBLE-HETEROSTRUCTURE BLUE-LIGHT-EMITTING DIODES [J].
NAKAMURA, S ;
MUKAI, T ;
SENOH, M .
APPLIED PHYSICS LETTERS, 1994, 64 (13) :1687-1689
[6]   Room-temperature continuous-wave operation of InGaN multi-quantum-well-structure laser diodes with a long lifetime [J].
Nakamura, S ;
Senoh, M ;
Nagahama, S ;
Iwasa, N ;
Yamada, T ;
Matsushita, T ;
Sugimoto, Y ;
Kiyoku, H .
APPLIED PHYSICS LETTERS, 1997, 70 (07) :868-870
[7]   HIGH-BRIGHTNESS INGAN BLUE, GREEN AND YELLOW LIGHT-EMITTING-DIODES WITH QUANTUM-WELL STRUCTURES [J].
NAKAMURA, S ;
SENOH, N ;
IWASA, N ;
NAGAHAMA, SI .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1995, 34 (7A) :L797-L799
[8]   The roles of structural imperfections in InGaN-Based blue light-emitting diodes and laser diodes [J].
Nakamura, S .
SCIENCE, 1998, 281 (5379) :956-961
[9]   Crystal orientation effects on many-body optical gain of wurtzite InGaN/GaN quantum well lasers [J].
Park, SH .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2003, 42 (2B) :L170-L172
[10]   Room temperature lasing at blue wavelengths in gallium nitride microcavities [J].
Someya, T ;
Werner, R ;
Forchel, A ;
Catalano, M ;
Cingolani, R ;
Arakawa, Y .
SCIENCE, 1999, 285 (5435) :1905-1906