Characteristics of stable emission GaN-based resonant-cavity light-emitting diodes

被引：27

作者：

Lin, CF ^{[1
]}

Yao, HH ^{[1
]}

Lu, JW ^{[1
]}

Hsieh, YL ^{[1
]}

Kuo, HC ^{[1
]}

Wang, SC ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 300, Taiwan

来源：

JOURNAL OF CRYSTAL GROWTH | 2004年 / 261卷 / 2-3期

关键词：

metalorganic chemical vapor deposition; AlN/GaN; distributed Bragg reflectors; GaN; InGaN/GaN; resonant-cavity light-emitting diode;

D O I：

10.1016/j.jcrysgro.2003.11.028

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The resonant-cavity light-emitting diode (RC-LED) structure was grown by MOCVD. The structure of RC-LED consisted of a 3lambda InGaN/GaN MQW LED cavity between the top TiO2/SiO2 DBR (81.7%, reflectance) and the bottom AlN/GaN DBR (90.4%) stack. A stable 410 nm emission peak and a low thermally induced red-shift effect (0.12 nm/kA/cm(2)) were measured by varying the injection current density. The light output power of the full RC-LED device was three times higher than the RC-LED without top TiO2/SiO2 DBR layers under 600 A/cm(2) inject current density. The narrow line width of 7.4 nm, emission peak localization at 410 nm, and three times higher output power were caused by the resonance effect in this vertical cavity structure. (C) 2003 Published by Elsevier B.V.

引用

页码：359 / 363

页数：5

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