Low-threshold lasing of InGaN vertical-cavity surface-emitting lasers with dielectric distributed Bragg reflectors

被引：68

作者：

Tawara, T ^{[1
]}

Gotoh, H ^{[1
]}

Akasaka, T ^{[1
]}

Kobayashi, N ^{[1
]}

Saitoh, T ^{[1
]}

机构：

[1] NTT Corp, NTT Basic Res Labs, Kanagawa 2430198, Japan

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 05期

关键词：

QUANTUM-WELL LASER; SEMICONDUCTOR MICROCAVITY; DIODES; MODE;

D O I：

10.1063/1.1596728

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Lasing action is achieved in InGaN vertical-cavity surface-emitting lasers (VCSELs) with dielectric distributed Bragg reflectors (DBRs). We fabricated III-nitride VCSELs by removing a SiC substrate from a III-nitride cavity with a dry etching technique and then wafer bonding the cavity and SiO2/ZrO2 DBRs. These VCSELs have a high quality factor of 460 and a spontaneous emission factor of 10(-2). We observed lasing at a wavelength of 401 nm at room temperature with optical pumping. This lasing action was demonstrated at a low threshold of 5.1 mJ/cm(2) by using a high-quality crystalline cavity and quantum-well layers without surface roughening or cracking. (C) 2003 American Institute of Physics.

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页码：830 / 832

页数：3

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