Control of the color contrast of a polychromatic light-emitting device with CdSe-ZnS nano-crystals on an InGaN-GaN quantum-well structure

被引：7

作者：

Yeh, DM ^{[1
]}

Huang, CF

Chen, HS

Tang, TY

Lu, CF

Lu, YC

Huang, JJ

Yang, CC

Liu, IS

Su, WF

机构：

[1] Natl Taiwan Univ, Grad Inst Electroopt Engn, Taipei 10617, Taiwan

[2] Natl Taiwan Univ, Dept Elect Engn, Taipei 10617, Taiwan

[3] Natl Taiwan Univ, Dept Mat Sci & Engn, Taipei 10617, Taiwan

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2006年 / 18卷 / 5-8期

关键词：

CdSe-ZnS nano-crystal; InGaN-GaN quantum well; light-emitting device; white light;

D O I：

10.1109/LPT.2006.870056

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Blue-red polychromatic light-emitting devices are fabricated by attaching red-emitting CdSe-ZnS nano-crystals on a blue-emitting InGaN-GaN multiple-quantum-well (MQW) structure. To improve the red/blue intensity contrast, holes of different diameters are fabricated for increasing the direct contact area between the MQW active regions and CdSe-ZnS nano-crystals. By comparing the devices of 10-, 50-, 60-, and 70-mu m hole diameters, and a reference device of no hole, it is found that the hole diameter of 60 mu m represents an optimized condition from the viewpoint of maintaining high quantum efficiency. However, the device of 10-mu m holes has the highest red/blue intensity ratio, which corresponds to a 36% increase. This result is attributed to its largest side-wall area in the holes among various samples.

引用

页码：712 / 714

页数：3

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