Nucleation and initial growth of platinum islands by plasma sputter deposition

被引:43
作者
Andreazza, P
Andreazza-Vignolle, C
Rozenbaum, JP
Thomann, AL
Brault, P
机构
[1] Univ Orleans, CNRS, Ctr Rech Mat Divisee, F-45071 Orleans 2, France
[2] Univ Orleans, Grp Rech Energet Milieux Ionises, F-45067 Orleans 2, France
关键词
nucleation; platinum; island; transmission electron microscopy (TEM); grazing incidence-small angle X-ray scattering (GISAXS); growth;
D O I
10.1016/S0257-8972(01)01604-8
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The nucleation and islands growth of platinum have been followed from an early stage through to complete substrate coverage. Thus, this study of initial stages of thin film growth has allowed to improve the understanding of growth mechanisms and to control the final nanomaterials structure. In the presented deposition method, the metal atom source is a negatively biased metal wire submitted to the bombardment of ions created in HF plasma. The originality of this plasma sputtering technique is that in addition to the metal atom flux, the substrate surface is submitted to a high flux of low energy ions, inducing a high atomic surface mobility and modifying the growth mode with respect to conventional deposition techniques (magnetron sputtering or evaporation). Platinum deposits have been investigated by ex situ characterisation techniques: grazing incidence-small angle X-ray scattering (GISAXS) and X-ray diffraction (GIXD) in conjunction with transmission electron microscopy (TEM). Using morphological parameters as coverage rate, islands number density and islands size, different mechanisms (scale laws, islands mobility coalescence, etc.) governing the growth are described vs. Ar ion and Pt atom energies and fluxes. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:122 / 127
页数:6
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