Piezoresistive property of CVD diamond films

被引：28

作者：

Deguchi, M ^{[1
]}

Hase, N ^{[1
]}

Kitabatake, M ^{[1
]}

Kotera, H ^{[1
]}

Shima, S ^{[1
]}

Kitagawa, M ^{[1
]}

机构：

[1] KYOTO UNIV,FAC ENGN,DEPT MECH ENGN,SAKYO KU,KYOTO 60601,JAPAN

来源：

关键词：

p-type diamond films; chemical vapor deposition; piezoresistive effect; gauge factor;

D O I：

10.1016/S0925-9635(96)00727-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Electrical and piezoresistive properties of chemical vapor-deposited boron-doped p-type polycrystalline diamond films were investigated. The p-type polycrystalline diamond films of about 2 mu m thickness were grown on a flat insulating polycrystalline diamond substrate using a conventional microwave plasma CVD system. The optimized p-type polycrystalline CVD film exhibited similar quality to homoepitaxial single crystalline diamond film with activation energy of 0.31-0.33 eV and small effects of grain boundaries. Piezoresistors (500 mu m long and 50 mu m wide) constituted from the optimized p-type polycrystalline diamond films were fabricated on diaphragm structure using photolithography and reactive-ion etching in an oxygen plasma. Relative change of the electrical resistance (Delta R/R-0) of the p-type diamond piezoresistor was almost proportional to the applied strain. Gauge factor K for the p-type diamond piezoresistor was derived to be similar to 1000 at room temperature and > 700 even at 200 degrees C. (C) 1997 Elsevier Science S.A.

引用

页码：367 / 373

页数：7

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