PIEZORESISTANCE EFFECT OF SILICON

被引：297

作者：

KANDA, Y

机构：

[1] Hamamatsu University School of Medicine, Hamamatsu

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 1991年 / 28卷 / 02期

关键词：

D O I：

10.1016/0924-4247(91)85017-I

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The principle of the piezoresistance effect (PR) of n- and p-Si is explained by the carrier-transfer mechanism and the effective mass change. The origin of the shear piezoresistance coefficient pi-44 in n-Si is also a stress-induced effective mass change. A graphical representation of the PR on crystallographic orientations and the effect of impurity concentration on the PR are given for n- and p-Si. The non-linearity of the PR is also mentioned.

引用

页码：83 / 91

页数：9

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