学术探索
学术期刊
新闻热点
数据分析
智能评审

Surfactants used in Ag(111) homoepitaxy: Sb, In, Pt and O-2

被引：11
作者：
vanderVegt, HA
Huisman, WJ
Howes, PB
Turner, TS
Vlieg, E
机构：
[1] FOM,INST ATOM & MOL PHYS,NL-1098 SJ AMSTERDAM,NETHERLANDS
[2] UNIV WALES COLL CARDIFF,DEPT PHYS,CARDIFF CF2 3YB,S GLAM,WALES
[3] SERC,DARESBURY LAB,WARRINGTON WA4 4AD,CHESHIRE,ENGLAND
来源：
SURFACE SCIENCE | 1996年 / 365卷 / 02期
关键词：
epitaxy; growth; low index single crystal surfaces; molecular beam epitaxy; silver; single crystal epitaxy; X-ray scattering; diffraction; and reflection;
D O I：
10.1016/0039-6028(96)00712-1
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We have investigated the effect of several surfactants on the homoepitaxial growth of Ag(111) by X-ray reflectivity experiments. Recently, we found that submonolayer amounts of Sb induce layer-by-layer growth of Ag on Ag(lll). Now we have varied the amount of Sb and also used In, Pt and O-2 as surfactant. We show that Sb is not unique in inducing two-dimensional growth in Ag(111) homoepitaxy: In and Pt have the same effect. For O-2 the sticking coefficient to Ag(111) is too low to affect the growth significantly. At the lowest growth temperatures (< 170 K), only Sb induces layer-by-layer growth.
引用
收藏
页码：205 / 211
页数：7
相关论文
共 15 条
[1]   THE MULTILAYER GROWTH MODE IN THE EPITAXY OF AG ON AG(111) ANALYZED BY SPALEED [J].
AMMER, C ;
SCHAEFER, T ;
TEICHERT, C ;
MEINEL, K ;
KLAUA, M .
SURFACE SCIENCE, 1994, 307 :570-575
[2]   ATOMIC AND MOLECULAR-OXYGEN ADSORPTION ON AG(111) [J].
CAMPBELL, CT .
SURFACE SCIENCE, 1985, 157 (01) :43-60
[3]   ORIGIN OF OXYGEN-INDUCED LAYER-BY-LAYER GROWTH IN HOMOEPITAXY ON PT(111) [J].
ESCH, S ;
HOHAGE, M ;
MICHELY, T ;
COMSA, G .
PHYSICAL REVIEW LETTERS, 1994, 72 (04) :518-521
[4]   SPA-LEED STUDIES OF GROWTH OF AG ON AG(111) AT LOW-TEMPERATURES [J].
LUO, EZ ;
WOLLSCHLAGER, J ;
WEGNER, F ;
HENZLER, M .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1995, 60 (01) :19-25
[5]   ON TWIN AND STACKING-FAULT FORMATION DURING THE EPITAXIAL FILM GROWTH OF FCC MATERIALS ON (111) SUBSTRATES [J].
MEINEL, K ;
KLAUA, M ;
BETHGE, H .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1988, 110 (01) :189-196
[6]   IMPORTANCE OF THE ADDITIONAL STEP-EDGE BARRIER IN DETERMINING FILM MORPHOLOGY DURING EPITAXIAL-GROWTH [J].
MEYER, JA ;
VRIJMOETH, J ;
VANDERVEGT, HA ;
VLIEG, E ;
BEHM, RJ .
PHYSICAL REVIEW B, 1995, 51 (20) :14790-14793
[7]  
MIEDEMA AR, 1978, Z METALLKD, V69, P287
[8]   NEW PHENOMENA IN HOMOEPITAXIAL GROWTH OF METALS [J].
POELSEMA, B ;
KUNKEL, R ;
NAGEL, N ;
BECKER, AF ;
ROSENFELD, G ;
VERHEIJ, LK ;
COMSA, G .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1991, 53 (05) :369-376
[9]   ISOTOPE EFFECT IN DISSOCIATIVE ADSORPTION OF O2 ON AG(111) [J].
REIJNEN, PHF ;
RAUKEMA, A ;
VANSLOOTEN, U ;
KLEYN, AW .
SURFACE SCIENCE, 1991, 253 (1-3) :24-32
[10]   Indium-induced layer-by-layer growth and suppression of twin formation in the homoepitaxial growth of Cu(111) [J].
vanderVegt, HA ;
Alvarez, J ;
Torrelles, X ;
Ferrer, S ;
Vlieg, E .
PHYSICAL REVIEW B, 1995, 52 (24) :17443-17448
12