A pH sensor with a double-gate silicon nanowire field-effect transistor

被引：56

作者：

Ahn, Jae-Hyuk ^{[1
]}

Kim, Jee-Yeon ^{[1
]}

Seol, Myeong-Lok ^{[1
]}

Baek, David J. ^{[1
]}

Guo, Zheng ^{[1
]}

Kim, Chang-Hoon ^{[1
]}

Choi, Sung-Jin ^{[2
]}

Choi, Yang-Kyu ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Dept Elect Engn, Taejon 305701, South Korea

[2] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 08期

关键词：

THRESHOLD VOLTAGE; INTERFACE; ISFETS; MODEL;

D O I：

10.1063/1.4793655

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A pH sensor composed of a double-gate silicon nanowire field-effect transistor (DG Si-NW FET) is demonstrated. The proposed DG Si-NW FET allows the independent addressing of the gate voltage and hence improves the sensing capability through an application of asymmetric gate voltage between the two gates. One gate is a driving gate which controls the current flow, and the other is a supporting gate which amplifies the shift of the threshold voltage, which is a sensing metric, and which arises from changes in the pH. The pH signal is also amplified through modulation of the gate oxide thickness. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4793655]

引用

页数：5

共 18 条

[1] Nanowire FET Biosensors on a Bulk Silicon Substrate [J].

Ahn, Jae-Hyuk ;

Kim, Jee-Yeon ;

Choi, Kyungyong ;

Moon, Dong-Il ;

Kim, Chang-Hoon ;

Seol, Myeong-Lok ;

Park, Tae Jung ;

Lee, Sang Yup ;

Choi, Yang-Kyu .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2012, 59 (08) :2243-2249

[2] Double-Gate Nanowire Field Effect Transistor for a Biosensor [J].

Ahn, Jae-Hyuk ;

Choi, Sung-Jin ;

Han, Jin-Woo ;

Park, Tae Jung ;

Lee, Sang Yup ;

Choi, Yang-Kyu .

NANO LETTERS, 2010, 10 (08) :2934-2938

[3]

[Anonymous], ATLAS US MAN

[4]

Beckman A.O., 1936, U.S. Patent, Patent No. [2,058,761, 2058761]

[5] Thirty years of ISFETOLOGY - What happened in the past 30 years and what may happen in the next 30 years [J].

Bergveld, P .

SENSORS AND ACTUATORS B-CHEMICAL, 2003, 88 (01) :1-20

[6] DEVELOPMENT OF AN ION-SENSITIVE SOLID-STATE DEVICE FOR NEUROPHYSIOLOGICAL MEASUREMENTS [J].

BERGVELD, P .

IEEE TRANSACTIONS ON BIOMEDICAL ENGINEERING, 1970, BM17 (01) :70-&

[7] THE ROLE OF BURIED OH-SITES IN THE RESPONSE MECHANISM OF INORGANIC-GATE PH-SENSITIVE ISFETS [J].

BOUSSE, L ;

BERGVELD, P .

SENSORS AND ACTUATORS, 1984, 6 (01) :65-78

[8] OPERATION OF CHEMICALLY SENSITIVE FIELD-EFFECT SENSORS AS A FUNCTION OF THE INSULATOR-ELECTROLYTE INTERFACE [J].

BOUSSE, L ;

DEROOIJ, NF ;

BERGVELD, P .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (10) :1263-1270

[9] Silicon-based nanoelectronic field-effect pH sensor with local gate control [J].

Chen, Yu ;

Wang, Xihua ;

Erramilli, Shyamsunder ;

Mohanty, Pritiraj ;

Kalinowski, Agnieszka .

APPLIED PHYSICS LETTERS, 2006, 89 (22)

[10] Quantitative studies of long-term stable, top-down fabricated silicon nanowire pH sensors [J].

Choi, Sun ;

Park, Inkyu ;

Hao, Zhao ;

Holman, Hoi-Ying N. ;

Pisano, Albert P. .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2012, 107 (02) :421-428

← 1 2 →