Double-Gate Nanowire Field Effect Transistor for a Biosensor

被引：157

作者：

Ahn, Jae-Hyuk ^{[1
]}

Choi, Sung-Jin ^{[1
]}

Han, Jin-Woo ^{[1
]}

Park, Tae Jung ^{[2
,3
]}

Lee, Sang Yup ^{[2
,3
,4
,5
,6
]}

Choi, Yang-Kyu ^{[1
,4
]}

机构：

[1] Korea Adv Inst Sci & Technol, Dept Elect Engn, Taejon 305701, South Korea

[2] Korea Adv Inst Sci & Technol, BioProc Engn Res Ctr, Ctr Syst & Synthet Biotechnol, Taejon 305701, South Korea

[3] Korea Adv Inst Sci & Technol, Inst BioCentury, Taejon 305701, South Korea

[4] Korea Adv Inst Sci & Technol, Dept Chem & Biomol Engn, Taejon 305701, South Korea

[5] Korea Adv Inst Sci & Technol, Dept Biol Sci, Dept Bio & Brain Engn, Taejon 305701, South Korea

[6] Korea Adv Inst Sci & Technol, Bioinformat Res Ctr, Taejon 305701, South Korea

来源：

NANO LETTERS | 2010年 / 10卷 / 08期

关键词：

Double-gate; nanowire; field effect transistor; FinFET; biosensor; sensitivity; avian influenza (AI); ELECTRICAL DETECTION; SILICON NANOWIRES; ARRAYS; SENSORS; DNA;

D O I：

10.1021/nl1010965

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A silicon nanowire field effect transistor (PET) straddled by the double-gate was demonstrated for biosensor application. The separated double-gates, G1 (primary) and G2 (secondary), allow independent voltage control to modulate channel potential. Therefore, the detection sensitivity was enhanced by the use of G2. By applying weakly positive bias to G2, the sensing window was significantly broadened compared to the case of employing G1 only, which is nominally used in conventional nanowire FET-based biosensors. The charge effect arising from biomolecules was also analyzed. Double-gate nanowire FET can pave the way for an electrically working biosensor without a labeling process.

引用

页码：2934 / 2938

页数：5

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