Alignment tolerant structures for ease of optoelectronic packaging

被引：6

作者：

Dagenais, M ^{[1
]}

Saini, SS ^{[1
]}

Vusirikala, V ^{[1
]}

Bartolo, RE ^{[1
]}

Whaley, RD ^{[1
]}

Dilli, Z ^{[1
]}

Hu, Y ^{[1
]}

Fan, ZF ^{[1
]}

Johnson, FG ^{[1
]}

Shen, H ^{[1
]}

Pamalupati, J ^{[1
]}

Zhou, W ^{[1
]}

Stone, DR ^{[1
]}

机构：

[1] Univ Maryland, Dept Elect Engn, College Pk, MD 20742 USA

来源：

TESTING, PACKAGING, RELIABILITY, AND APPLICATIONS OF SEMICONDUCTOR LASERS IV | 1999年 / 3626卷

关键词：

mode expanders; mode transformers; monolithic integration; alignment tolerant structures; coupling efficiency; adiabatic transformation; resonant coupling; semiconductor quantum-well lasers; semiconductor waveguides;

D O I：

10.1117/12.345423

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Expanded mode alignment tolerant optical structures will play an important role in low-cost, large-scale packaging of optoelectronic devices. In this paper, we present two expanded mode structures for operation at 1.55 mu m Our devices use single epitaxial growth and conventional fabrication schemes. High butt-coupling efficiencies (>40 %) to a single mode fiber with relaxed alignment tolerances were achieved. The first of our devices uses adiabatic transformation over 500 mu m. The second device uses resonant coupling over a much shorter region of 200 mu m. The second scheme offers an interesting possibility for monolithic integration of active-passive components. We present the design and simulation results of such an integrated device.

引用

页码：128 / 137

页数：10

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