Flow modulation epitaxy of indium gallium nitride

被引：17

作者：

Keller, S ^{[1
]}

Mishra, UK ^{[1
]}

Denbaars, SP ^{[1
]}

机构：

[1] UNIV CALIF SANTA BARBARA,DEPT MAT,SANTA BARBARA,CA 93106

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1997年 / 26卷 / 10期

关键词：

atomic force microscopy; flow modulation epitaxy; indium gallium nitride (InGaN); metalorganic chemical vapor deposition (MOCVD); photoluminescence;

D O I：

10.1007/s11664-997-0005-z

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

InGaN layers were grown an GaN films by flow modulation epitaxy (FME) using the precursors trimethylgallium, trimethylindium, and ammonia. The indium composition of the FME grown layers was generally lower than of films grown under the same conditions in the continuous growth medic, but which had been of poor optical quality. The indium incorporation efficiency increased with decreasing ammonia flush time, increasing ammonia flow during group-III injection, and increasing group-III precursor injection time. Films grown under optimized conditions showed intense band edge related luminescence at room temperature up to a wavelength of 465 nm, Atomic force microscopy investigations revealed a strong dependence of the surface morphology of the InGaN films on the growth mode.

引用

页码：1118 / 1122

页数：5

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