LOW-TEMPERATURE GROWTH OF ALGAP AND GAP ON SI SUBSTRATES BY ATOMIC LAYER EPITAXY

被引：11

作者：

GONG, JR ^{[1
]}

NAKAMURA, S ^{[1
]}

LEONARD, M ^{[1
]}

BEDAIR, SM ^{[1
]}

ELMASRY, NA ^{[1
]}

机构：

[1] N CAROLINA STATE UNIV,DEPT ELECT & COMP ENGN,RALEIGH,NC 27695

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1992年 / 21卷 / 10期

关键词：

ALE; MOCVD; ALGAP AND GAP ON SI HETEROEPITAXY; TEM;

D O I：

10.1007/BF02684204

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

AlGaP and GaP films were deposited on the (100) Si substrates by atomic layer epitaxy (ALE) in the temperature range between 450 and 600-degrees-C. Under optimum growth conditions, the growth of GaP and AlGaP was observed to proceed in a two-dimensional (2-D) fashion in the initial growth stages. These ALE-grown films have better surface morphology when compared with the corresponding MOCVD-grown films. With an AlGaP buffer layer grown on Si, the subsequent growth of GaAs on the AlGaP-coated Si substrates tends to proceed as 2-D growth. This avoids island growth and the two-step growth process currently used.

引用

页码：965 / 970

页数：6

共 18 条

[1]

ALJASSIM MM, 1986, MATER RES SOC S P, V62, P49

[2] RECENT ADVANCES IN VISIBLE LEDS [J].

BHARGAVA, RN .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, 22 (09) :691-701

[3] INITIAL-STAGES OF EPITAXIAL-GROWTH OF GAAS ON (100) SILICON [J].

BIEGELSEN, DK ;

PONCE, FA ;

SMITH, AJ ;

TRAMONTANA, JC .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (05) :1856-1859

[4]

CHIN TH, 1989, APPL PHYS LETT, V55, P1244

[5] MORPHOLOGY AND DISTRIBUTION OF ATOMIC STEPS ON SI(001) STUDIED WITH SCANNING TUNNELING MICROSCOPY [J].

DIJKKAMP, D ;

HOEVEN, AJ ;

VANLOENEN, EJ ;

LENSSINCK, JM ;

DIELEMAN, J .

APPLIED PHYSICS LETTERS, 1990, 56 (01) :39-41

[6] FORMATION OF PLANAR DEFECTS IN THE EPITAXIAL-GROWTH OF GAP ON SI SUBSTRATE BY METAL ORGANIC CHEMICAL-VAPOR DEPOSITION [J].

ERNST, F ;

PIROUZ, P .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (09) :4526-4530

[7] NUCLEATION AND DEFECT GENERATION IN LATTICE MATCHED AND MISMATCHED HETEROEPITAXIAL LAYERS IN THE GAAS ALXGA1-XP/SI SYSTEM [J].

GEORGE, T ;

WEBER, ER ;

NOZAKI, S ;

WU, AT ;

NOTO, N ;

UMENO, M .

JOURNAL OF APPLIED PHYSICS, 1990, 67 (05) :2441-2446

[8] ATOMIC LAYER EPITAXY OF ALGAAS [J].

GONG, JR ;

JUNG, D ;

ELMASRY, NA ;

BEDAIR, SM .

APPLIED PHYSICS LETTERS, 1990, 57 (04) :400-402

[9] 2-DIMENSIONAL GROWTH OF GAP ON SI SUBSTRATES UNDER HIGH V/III-RATIO BY METAL ORGANIC VAPOR-PHASE EPITAXY [J].

IMAIZUMI, M ;

SAKA, T ;

JIMBO, T ;

SOGA, T ;

UMENO, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (03) :451-453

[10] HETERO-EPITAXIAL GROWTH OF GAP ON A SI (100) SUBSTRATE BY MOLECULAR-BEAM EPITAXY [J].

KAWANAMI, H ;

SAKAMOTO, T ;

TAKAHASHI, T ;

SUZUKI, E ;

NAGAI, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (02) :L68-L70

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