2-DIMENSIONAL GROWTH OF GAP ON SI SUBSTRATES UNDER HIGH V/III-RATIO BY METAL ORGANIC VAPOR-PHASE EPITAXY

被引：7

作者：

IMAIZUMI, M ^{[1
]}

SAKA, T ^{[1
]}

JIMBO, T ^{[1
]}

SOGA, T ^{[1
]}

UMENO, M ^{[1
]}

机构：

[1] DAIDO STEEL CO LTD,NEW MAT RES LAB,MINAMI KU,NAGOYA 457,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 03期

关键词：

HETEROEPITAXY; V/III-RATIO; DSD; GAP; SI; EBIC; MOVPE;

D O I：

10.1143/JJAP.30.451

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Direct heteroepitaxial growth of GaP layers on Si substrates by metal organic vapor phase epitaxy (MOVPE) has been studied. The effects of growth temperature and the V/III ratio on the layers were investigated. Hillocks appeared when the growth temperature was lower than 850-degrees-C. It was clarified that the growth is two-dimensional when the V/III ratio is higher than 600. Once the two-dimensional growth is realized at the initial stage, the subsequent growth is easily attained under the condition of low V/III ratios. The crosshatch pattern was observed on the surface. The EBIC plan images show the dark lines corresponding to crosshatches and dark spots. The dark spot density (DSD) is less than 3 x 10(5) cm-2.

引用

页码：451 / 453

页数：3

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