High-gain and low-threshold InAs quantum-dot lasers on InP -: art. no. 243107

被引：114

作者：

Caroff, P ^{[1
]}

Paranthoen, C ^{[1
]}

Platz, C ^{[1
]}

Dehaese, O ^{[1
]}

Folliot, H ^{[1
]}

Bertru, N ^{[1
]}

Labbé, C ^{[1
]}

Piron, R ^{[1
]}

Homeyer, E ^{[1
]}

Le Corre, A ^{[1
]}

Loualiche, S ^{[1
]}

机构：

[1] INSA Rennes, CNRS, UMR C6082, Lab Etud Nanotstruct Semicond, F-34043 Rennes, France

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 24期

关键词：

D O I：

10.1063/1.2146063

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

InAs quantum-dot (QD) laser structures are grown on (113)B-oriented InP substrate by gas-source molecular-beam epitaxy. Following an optimized growth procedure, a high density of 1.1x10(11) cm(-2) of uniformly sized QDs is achieved. Broad-area lasers containing three stacked QD layers have been realized and tested. Laser emission on the ground-state transition (lambda=1.59 mu m) is obtained at room temperature (RT), at a threshold current density as low as 190 A/cm(2). Ground-state modal gain and transparency current density is measured to be 7 cm(-1) and 23 A/cm(2) per dot layer. Ground-state laser emission is also demonstrated from low temperature (100 K, J(th)=33 A/cm(2)) to high temperature (350 K), exhibiting an insensitive threshold in the [100, 170] K range, and a 55 K characteristic temperature at RT. (c) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

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