Emission wavelength control of InAs quantum dots in a GaInAsP matrix grown on InP(311)B substrates

被引：21

作者：

Caroff, P ^{[1
]}

Bertru, N ^{[1
]}

Platz, C ^{[1
]}

Dehaese, O ^{[1
]}

Le Corre, A ^{[1
]}

Loualiche, S ^{[1
]}

机构：

[1] INSA Rennes, UMR 6082, LENS, F-35043 Rennes, France

来源：

JOURNAL OF CRYSTAL GROWTH | 2005年 / 273卷 / 3-4期

关键词：

low-dimensional structures; molecular beam epitaxy;

D O I：

10.1016/j.jcrysgro.2004.09.031

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We present the control of the emission wavelength of InAs quantum dots in a GaInAsP matrix grown on InP(311)B substrates by g-as source molecular beam epitaxy. By growing the capping layer in two steps, the control of the dot height and thus of the emission wavelength is achieved. The dot height is tuned using As/P exchange during a growth interrupt. We have studied the changes induced by the nature of the overpressure (As, P, As and P) during the growth interrupt. Photoluminescence spectra at room temperature show the effects of the different growth parameters on the peak energy and width. (C) 2004 Elsevier B.V. All rights reserved.

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页码：357 / 362

页数：6

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