Using As/P exchange processes to modify InAs/InP quantum dots

被引：45

作者：

Poole, PJ ^{[1
]}

Williams, RL ^{[1
]}

Lefebvre, J ^{[1
]}

Moisa, S ^{[1
]}

机构：

[1] Natl Res Council Canada, Inst Microstruct Sci, IMS, Ottawa, ON K1A 0R6, Canada

来源：

JOURNAL OF CRYSTAL GROWTH | 2003年 / 257卷 / 1-2期

关键词：

nanostructures; chemical beam epitaxy; semiconducting III-V materials;

D O I：

10.1016/S0022-0248(03)01421-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We have used low temperature photoluminescence and atomic force microscopy to study the growth, by chemical beam epitaxy, of self-assembled InAs/InP quantum dots. By modifying the procedure for capping the dots we have been able to control their emission energy by adjusting their height. This process relies on the As/P exchange process that occurs when an InAs surface is exposed to a phosphorus flux. This exchange is shown to occur for both continuous and discontinuous capping procedures. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：89 / 96

页数：8

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