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High power temperature-insensitive 1.3 μm InAs/InGaAs/GaAs quantum dot lasers

被引：141
作者：
Mikhrin, SS
Kovsh, AR
Krestnikov, IL
Kozhukhov, AV
Livshits, DA
Ledentsov, NN
Shernyakov, YM
Novikov, II
Maximov, MV
Ustinov, VM
Alferov, ZI
机构：
[1] NL Nanosemicond GMBH, D-44227 Dortmund, Germany
[2] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2005年 / 20卷 / 05期
关键词：
D O I：
10.1088/0268-1242/20/5/002
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report on GaAs-based broad area (100 mu m) 1.3 mu m quantum dot (QD) lasers with high CW output power (5 W) and wall-plug efficiency (56%). The reliability of the devices has been demonstrated beyond 3000 It of CW operation at 0.9 W and 40 degrees C heat sink temperature with 2% degradation in performance. P-doped QD lasers with a temperature-insensitive threshold current (To > 650 K) and differential efficiency (T-1 = infinity) up to 80 degrees C have been realized.
引用
收藏
页码：340 / 342
页数：3
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