High temperature performance of self-organised quantum dot laser with stacked p-doped active region

被引：127

作者：

Shchekin, OB ^{[1
]}

Ahn, J ^{[1
]}

Deppe, DG ^{[1
]}

机构：

[1] Univ Texas, Dept Elect & Comp Engn, Microelect Res Ctr, Austin, TX 78712 USA

来源：

ELECTRONICS LETTERS | 2002年 / 38卷 / 14期

关键词：

D O I：

10.1049/el:20020509

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A stacked p-doped quantum dot active region is used to obtain a high characteristic temperature in GaAs-based 1.3 mum lasers. A characteristic temperature of 232 K (213 K) is obtained between 0 and 81 degreesC for pulsed (continuous-wave) operation for lasers with 0.97 mm cavity length and five stacks of quantum dot layers. The room-temperature continuous-wave output power for a 0.65 mm. cavity length reaches 27 mW with a 5.7 mA threshold.

引用

页码：712 / 713

页数：2

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