Self-aligned top-gate amorphous gallium indium zinc oxide thin film transistors

被引：82

作者：

Park, Jaechul ^{[1
]}

Song, Ihun ^{[1
]}

Kim, Sunil ^{[1
]}

Kim, Sangwook ^{[1
]}

Kim, Changjung ^{[1
]}

Lee, Jaecheol ^{[2
]}

Lee, Hyungik ^{[2
]}

Lee, Eunha ^{[2
]}

Yin, Huaxiang ^{[1
]}

Kim, Kyoung-Kok ^{[1
]}

Kwon, Kee-Won ^{[3
]}

Park, Youngsoo ^{[1
]}

机构：

[1] Samsung Adv Inst Technol, Semicond Device Lab, Yongin 446712, Gyeonggi Do, South Korea

[2] Samsung Adv Inst Technol, Analyt Engn Ctr, Yongin 446712, Gyeonggi Do, South Korea

[3] Sungkyunkwan Univ, Dept Semicond Syst Engn, Suwon, Gyeonggi Do, South Korea

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 05期

关键词：

D O I：

10.1063/1.2966145

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have demonstrated a self-aligned top-gate amorphous gallium indium zinc oxide thin film transistor (a-GIZO TFT). It had a field effect mobility of 5 cm(2)/V s, a threshold voltage of 0.2 V, and a subthreshold swing of 0.2 V/decade. Ar plasma was treated on the source/drain region of the a-GIZO active layer to reduce the series resistance. After Ar plasma treatment, the surface of the source/drain region was divided into In-rich and In-deficient regions. The a-GIZO TFT also had a constant sheet resistance of 1 k Omega/square for a film thickness of over 40 nm. The interface between the source/drain Mo metal and the Ar plasma-treated a-GIZO indicated a good Ohmic contact and a contact resistivity of 50 mu Omega cm(2). (C) 2008 American Institute of Physics.

引用

页数：3

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