Edge-Dependent Transport Properties in Graphene

被引：18

作者：

Goto, Hidenori ^{[1
,2
]}

Uesugi, Eri ^{[1
]}

Eguchi, Ritsuko ^{[1
]}

Fujiwara, Akihiko

Kubozono, Yoshihiro ^{[1
,2
]}

机构：

[1] Okayama Univ, Res Lab Surface Sci, Okayama 7008530, Japan

[2] Okayama Univ, Res Ctr New Funct Mat Energy Prod Storage & Trans, Okayama 7008530, Japan

来源：

NANO LETTERS | 2013年 / 13卷 / 03期

基金：

日本科学技术振兴机构;

关键词：

Graphene; edge; Raman spectroscopy; ionic liquid gate; transport property; flat band; RAMAN-SCATTERING; QUANTUM; NANORIBBONS; TRANSISTOR; INSULATOR; POINT; STATE;

D O I：

10.1021/nl3044844

中图分类号：

O6 [化学];

学科分类号：

070301 [无机化学];

摘要：

Graphene has two kinds of edges which have different electronic properties. A singular electronic state emerges at zigzag edges, while it disappears at armchair edges. We study the edge-dependent transport properties in few-layer graphene by applying a side gate voltage to the edge with an ionic liquid. The devices indicating a conductance peak at the charge neutrality point have zigzag edges, confirmed by micro-Raman spectroscopy mapping. The hopping transport between zigzag edges increases the conductance.

引用

收藏

页码：1126 / 1130

页数：5

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