Electrically pumped InGaAsP-InP microring optical amplifiers and lasers with surface passivation

被引：46

作者：

Amarnath, K ^{[1
]}

Grover, R ^{[1
]}

Kanakaraju, S ^{[1
]}

Ho, PT ^{[1
]}

机构：

[1] Univ Maryland, Phys Sci Lab, Dept Elect & Comp Engn, College Pk, MD 20740 USA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2005年 / 17卷 / 11期

关键词：

InGaAsP; microresonator; microring; optical amplifier; optical laser; optical logic; passivation; photonic logic; surface recombination;

D O I：

10.1109/LPT.2005.857596

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Vertically coupled electrically pumped InGaAsP microring optical amplifiers providing gain at 1550 nm are demonstrated. The microrings provide up to 10 dB of gain at the through-port in pulsed mode. The bias current is used to control the loss in the ring and, hence, the region of operation (under-coupled, critically coupled, transparency, and gain). Sulfur passivation is used to reduce carrier loss due to surface recombination in the active region. The amplifiers are designed for application in cascaded microring optical logic gates in photonic logic circuits.

引用

页码：2280 / 2282

页数：3

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