In-well ambipolar diffusion in room-temperature InGaAsP multiple quantum wells

被引：7

作者：

Marshall, D ^{[1
]}

Miller, A

Button, CC

机构：

[1] Univ St Andrews, Sch Phys & Astron, St Andrews KY16 9SS, Fife, Scotland

[2] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 2000年 / 36卷 / 09期

关键词：

diffusion processes; quantum wells; semiconductor materials measurement;

D O I：

10.1109/3.863952

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Three-pulse transient amplitude grating experiments were performed using picosecond pulses at 1.525 mu m on room-temperature InGaAsP multiple quantum wells using a PPLN optical parametric oscillator. An ambipolar diffusion coefficient of 7.2 cm(2)/s was measured from the diffraction efficiency decay rates. We deduce the presence of alloy scattering or an increase in interface scattering when comparing these results with those of similar experiments on GaAs-AlGaAs multiple quantum wells.

引用

页码：1013 / 1015

页数：3

共 14 条

[1] Spin gratings and the measurement of electron drift mobility in multiple quantum well semiconductors [J].

Cameron, AR ;

Riblet, P ;

Miller, A .

PHYSICAL REVIEW LETTERS, 1996, 76 (25) :4793-4796

[2] DIFFRACTION EFFICIENCY AND DECAY TIMES OF FREE-CARRIER GRATINGS IN SILICON [J].

EICHLER, HJ ;

MASSMANN, F .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (04) :3237-3242

[3] MEASUREMENT OF SURFACE RECOMBINATION VELOCITY IN SEMICONDUCTORS BY DIFFRACTION FROM PICOSECOND TRANSIENT FREE-CARRIER GRATINGS [J].

HOFFMAN, CA ;

JARASIUNAS, K ;

GERRITSEN, HJ ;

NURMIKKO, AV .

APPLIED PHYSICS LETTERS, 1978, 33 (06) :536-539

[4] AMBIPOLAR DIFFUSION MEASUREMENTS IN SEMICONDUCTORS USING NON-LINEAR TRANSIENT GRATINGS [J].

JARASIUNAS, K ;

GERRITSEN, HJ .

APPLIED PHYSICS LETTERS, 1978, 33 (02) :190-193

[5] PROPERTIES OF A LASER-INDUCED PHASE GRATING IN CDSE [J].

JARASIUNAS, K ;

VAITKUS, J .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1974, 23 (01) :K19-K21

[6] CHARGE-CARRIER RECOMBINATION AND DIFFUSION IN INGAAS(P) EPITAXIAL LAYERS [J].

JUODKAZIS, S ;

PETRAUSKAS, M ;

QUACHA, A ;

WILLANDER, M .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1993, 140 (02) :439-443

[7] DYNAMIC GRATINGS IN CADMIUM TELLURIDE [J].

KREMENITSKII, V ;

ODOULOV, S ;

SOSKIN, M .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 51 (01) :K63-K66

[8] A NOTE ON DETERMINANTS OF HOUSEHOLD SAVING BEHAVIOR [J].

LINDQVIST, A .

JOURNAL OF ECONOMIC PSYCHOLOGY, 1981, 1 (01) :39-57

[9] PICOSECOND ROOM-TEMPERATURE EXCITONIC-ABSORPTION SATURATION AND 4-WAVE-MIXING IN INAS/GAAS SHORT-PERIOD STRAINED-LAYER SUPERLATTICES [J].

MCCALLUM, DS ;

HUANG, XR ;

DAWSON, MD ;

BOGGESS, TF ;

SMIRL, AL ;

HASENBERG, TC .

SUPERLATTICES AND MICROSTRUCTURES, 1990, 8 (01) :127-130

[10] TRANSIENT GRATING STUDIES OF EXCITONIC OPTICAL NONLINEARITIES IN GAAS/ALGAAS MULTIPLE-QUANTUM-WELL STRUCTURES [J].

MILLER, A ;

MANNING, RJ ;

MILSOM, PK ;

HUTCHINGS, DC ;

CRUST, DW ;

WOODBRIDGE, K .

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 1989, 6 (04) :567-578

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