DIFFRACTION EFFICIENCY AND DECAY TIMES OF FREE-CARRIER GRATINGS IN SILICON

被引：46

作者：

EICHLER, HJ

MASSMANN, F

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 04期

关键词：

D O I：

10.1063/1.331025

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3237 / 3242

页数：6

共 18 条

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[2]

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[3]

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[7]

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[8]

JAIN RK, 1979, APPL PHYS LETT, V35, P6

[9] AMBIPOLAR DIFFUSION MEASUREMENTS IN SEMICONDUCTORS USING NON-LINEAR TRANSIENT GRATINGS [J].

JARASIUNAS, K ;

GERRITSEN, HJ .

APPLIED PHYSICS LETTERS, 1978, 33 (02) :190-193

[10] INVESTIGATION OF NONEQUILIBRIUM PROCESSES IN SEMICONDUCTORS BY METHOD OF TRANSIENT HOLOGRAMS [J].

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