Artificial electrical dipole in polymer multilayers for nonvolatile thin film transistor memory

被引：31

作者：

Chang, Chia-Chieh ^{[1
]}

Pei, Zingway ^{[2
]}

Chan, Yi-Jen ^{[1
,3
]}

机构：

[1] Ind Technol Res Inst, Elect & Optoelect Res Labs, Hsinchu 310, Taiwan

[2] Natl Chung Hsing Univ, Dept Elect Engn, Grad Inst Optoelect Engn, Taichung 40227, Taiwan

[3] Natl Cent Univ, Dept Elect Engn, Chungli 32001, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 14期

关键词：

D O I：

10.1063/1.2996260

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this letter, an organic nonvolatile thin film transistor (TFT) memory on a plastic substrate is reported. The cross-linked poly-4-vinyl phenol (PVP) is used as a polymer dielectric layer in the form of a triple layer structure to achieve the memory function. Two interfaces between the PVP triple layers are the main trapping centers for electrons and holes, respectively, which are verified by the capacitance-voltage analysis. The electric dipole is established by the separated electrons and holes in the two interfaces of the PVP triple layer structure and results in an 11 V memory window for the TFT nonvolatile memory. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.2996260]

引用

页数：3

共 17 条

[1] Organic non-volatile memory based on pentacene field-effect transistors using a polymeric gate electret [J].

Baeg, Kang-Jun ;

Noh, Yong-Young ;

Ghim, Jieun ;

Kang, Seok-Ju ;

Lee, Hyemi ;

Kim, Dong-Yu .

ADVANCED MATERIALS, 2006, 18 (23) :3179-+

[2]

Haseebuddin S, 1997, POLYM INT, V44, P453, DOI 10.1002/(SICI)1097-0126(199712)44:4<453::AID-PI848>3.0.CO

[3]

2-F

[4] Organic field-effect transistors with polarizable gate insulators [J].

Katz, HE ;

Hong, XM ;

Dodabalapur, A ;

Sarpeshkar, R .

JOURNAL OF APPLIED PHYSICS, 2002, 91 (03) :1572-1576

[5] Pentacene organic transistors and ring oscillators on glass and on flexible polymeric substrates [J].

Klauk, H ;

Halik, M ;

Zschieschang, U ;

Eder, F ;

Schmid, G ;

Dehm, C .

APPLIED PHYSICS LETTERS, 2003, 82 (23) :4175-4177

[6] Hysteresis mechanism and reduction method in the bottom-contact pentacene thin-film transistors with cross-linked poly(vinyl alcohol) gate insulator [J].

Lee, Cheon An ;

Park, Dong Wook ;

Jin, Sung Hun ;

Park, Il Han ;

Lee, Jong Duk ;

Park, Byung-Gook .

APPLIED PHYSICS LETTERS, 2006, 88 (25)

[7] A 16-byte nonvolatile bistable polymer memory array on plastic substrates [J].

Lin, Heng-Tien ;

Pei, Zingway ;

Chen, Jun-Rong ;

Kung, Chen-Pang ;

Lin, Yu-Cheng ;

Tseng, Chi-Ming ;

Chan, Yi-Jen .

2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2, 2007, :233-+

[8]

MATTIS BA, 2006, IEDM TECH DIG, P311

[9] Easily processable phenylene-thiophene-based organic field-effect transistors and solution-fabricated nonvolatile transistor memory elements [J].

Mushrush, M ;

Facchetti, A ;

Lefenfeld, M ;

Katz, HE ;

Marks, TJ .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2003, 125 (31) :9414-9423

[10] Low-voltage polymer field-effect transistors for nonvolatile memories [J].

Naber, RCG ;

de Boer, B ;

Blom, PWM ;

de Leeuw, DM .

APPLIED PHYSICS LETTERS, 2005, 87 (20) :1-3

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