Co-sputtering yttrium into hafnium oxide thin films to produce ferroelectric properties

被引：159

作者：

Olsen, T. ^{[1
,2
]}

Schroeder, U. ^{[1
]}

Mueller, S. ^{[1
]}

Krause, A. ^{[1
]}

Martin, D. ^{[1
]}

Singh, A. ^{[1
]}

Mueller, J. ^{[3
]}

Geidel, M. ^{[4
]}

Mikolajick, T. ^{[1
,4
]}

机构：

[1] NaMLab gGmbH, D-01187 Dresden, Germany

[2] Univ Alberta, Dept Elect & Comp Engn, Edmonton, AB T6G 2V4, Canada

[3] Fraunhofer CNT, D-01099 Dresden, Germany

[4] Tech Univ Dresden, Inst Semicond & Microsyst, D-01062 Dresden, Germany

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 08期

关键词：

MEMORY; POLARIZATION;

D O I：

10.1063/1.4747209

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thin film capacitors were fabricated by sputtering TiN-Y doped HfO2-TiN stacks on silicon substrates. Yttrium was incorporated into the HfO2 layers by simultaneously sputtering from Y2O3 and HfO2 sources. Electric polarization and relative permittivity measurements yield distinct ferroelectric properties as a result of low yttrium dopant concentrations in the range of 0.9-1.9 mol. %. Grazing incidence x-ray diffraction measurements show the formation of an orthorhombic phase in this range. Compared to atomic layer deposition films, the highest remanent polarization and the highest relative permittivity were obtained at significantly lower doping concentrations in these sputtered films. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4747209]

引用

页数：4

共 22 条

[1] Ferroelectricity in hafnium oxide thin films [J].

Boescke, T. S. ;

Mueller, J. ;

Braeuhaus, D. ;

Schroeder, U. ;

Boettger, U. .

APPLIED PHYSICS LETTERS, 2011, 99 (10)

[2] The high-k solution [J].

Bohr, Mark T. ;

Chau, Robert S. ;

Ghani, Tahir ;

Mistry, Kaizad .

IEEE SPECTRUM, 2007, 44 (10) :29-35

[3] Reversible and irreversible domain wall contributions to the polarization in ferroelectric thin films [J].

Bolten, D ;

Lohse, O ;

Grossmann, M ;

Waser, R .

FERROELECTRICS, 1999, 221 (1-4) :251-257

[4] Epitaxial growth of yttrium-stabilized HfO2 high-k gate dielectric thin films on Si [J].

Dai, JY ;

Lee, PF ;

Wong, KH ;

Chan, HLW ;

Choy, CL .

JOURNAL OF APPLIED PHYSICS, 2003, 94 (02) :912-915

[5] Appearance of ferroelectricity in thin films of incipient ferroelectric [J].

Eliseev, E. A. ;

Glinchuk, M. D. ;

Morozovska, A. N. .

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2007, 244 (10) :3660-3672

[6] Ferroelectric Field Effect Transistors for Memory Applications [J].

Hoffman, Jason ;

Pan, Xiao ;

Reiner, James W. ;

Walker, Fred J. ;

Han, J. P. ;

Ahn, Charles H. ;

Ma, T. P. .

ADVANCED MATERIALS, 2010, 22 (26-27) :2957-2961

[7] Integration of lead zirconium titanate thin films for high density ferroelectric random access memory [J].

Kim, Kinam ;

Lee, Sungyung .

JOURNAL OF APPLIED PHYSICS, 2006, 100 (05)

[8]

Koike H., 1997, US Patent, Patent No. [5,600,587, 5600587]

[9] First-principles study on doping and phase stability of HfO2 [J].

Lee, Choong-Ki ;

Cho, Eunae ;

Lee, Hyo-Sug ;

Hwang, Cheol Seong ;

Han, Seungwu .

PHYSICAL REVIEW B, 2008, 78 (01)

[10]

Lines M. E., 2001, Principles and Applications of Ferroelectrics and Related Materials

← 1 2 3 →