Post-breakdown oxide voltage oscillation in thin SiO2 under nano-scaled repetitive ramped voltage stress

被引：5

作者：

Wu, YL ^{[1
]}

Lin, ST ^{[1
]}

机构：

[1] Natl Chinan Univ, Dept Elect Engn, Nantou 545, Taiwan

来源：

ELECTRONICS LETTERS | 2006年 / 42卷 / 02期

关键词：

D O I：

10.1049/el:20063577

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The post-breakdown behaviour of a thin SiO2 layer on the same oxide location under repetitive ramped voltage stress using a conductive atomic force microscopy is reported for the first time. It was observed that the oxide voltage on the same spot decreases and then oscillates between certain smaller values after it is broken down. A mechanism based on permanent trap generation in the oxide accompanied with trap capture radius and trap energy level relaxation is proposed to explain the oxide voltage oscillation phenomenon.

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收藏

页码：118 / 120

页数：3

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