Impact of conductivity and size of the breakdown spot on the progressive-breakdown of thin SiO2 gate oxides

被引：5

作者：

Porti, M ^{[1
]}

Nafría, M ^{[1
]}

Aymerich, X ^{[1
]}

机构：

[1] Univ Autonoma Barcelona, Dept Elect Engn, E-08193 Bellaterra, Spain

来源：

MICROELECTRONIC ENGINEERING | 2004年 / 72卷 / 1-4期

关键词：

dielectric breakdown; progressive breakdown; SiO2; films; conductive atomic force microscope;

D O I：

10.1016/j.mee.2003.12.011

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, for the first time, a conductive atomic force microscope has been used to electrically characterize the progressiveness of the breakdown phenomenon of stressed thin (2.9 and 4.2 nm) SiO2 films at a nanometer scale. The extremely high lateral resolution of the technique allows to analyse independently the role of the oxide conductivity and the area of the breakdown (BD) spot. In particular, the results show that the gradual increase of the overall current that flows through the broken down oxide area is the consequence of the progressive growth of both parameters: the oxide conductivity at the location where BD was initially triggered and the size of the BD spot. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：29 / 33

页数：5

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