Voltage dependence of hard breakdown growth and the reliability implication in thin dielectrics

被引：95

作者：

Linder, BP

Lombardo, S

Stathis, JH

Vayshenker, A

Frank, DJ

机构：

[1] IBM Corp, Thomas J Watson Res Ctr, Div Res, Yorktown Hts, NY 10598 USA

[2] CNR, IMETEM, I-95121 Catania, Italy

[3] IBM Corp, Microelect Div, Hopewell Jct, NY 12533 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2002年 / 23卷 / 11期

关键词：

circuit reliability; dielectric breakdown; dielectric measurements; semiconductor device reliability; semiconductor-insulator interfaces;

D O I：

10.1109/LED.2002.805010

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Hard breakdown (HBD) is shown to be a gradual process with the gate current increasing at a predictable rate exponentially dependent on the instantaneous stress voltage and oxide thickness. This is contrary to conventional wisdom that maintains that HBD is a fast thermally driven process. The HBD degradation rate (DR) for a 15 Angstrom oxide scales from > 1 mA/s at 4 V to < 1 nA/s at 2 V, extrapolating to < 10 fA/s at use voltage. Adding the HBD evolution time to the standard time-to-breakdown potentially reduces the projected fail rate of gate dielectrics by orders of magnitude.

引用

收藏

页码：661 / 663

页数：3

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