Evidence for defect-generation-driven wear-out of breakdown conduction path in ultra thin oxides

被引：24

作者：

Monsieur, F ^{[1
]}

Vincent, E ^{[1
]}

Ribes, G ^{[1
]}

Huard, V ^{[1
]}

Bruyère, S ^{[1
]}

Roy, D ^{[1
]}

Pananakakis, G ^{[1
]}

Ghibaudo, G ^{[1
]}

机构：

[1] Cent R&D Labs, STMicroelect, F-38926 Crolles, France

来源：

41ST ANNUAL PROCEEDINGS: INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM | 2003年

关键词：

ultra-thin oxides; conduction path; wearout; runaway; progressiveness; power dissipation; generation rate; delay;

D O I：

10.1109/RELPHY.2003.1197785

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper considers the physical mechanisms responsible for the progressive (i.e. smooth or noisy) breakdown manifestation commonly measured on ultra-thin oxides (Tox<25Angstrom). First, it is verified that the theory previously published is relevant by highlighting progressive behavior predicted on thicker oxides (50Angstrom). Second, the power dissipated is shown not to be correlated to the progressive behavior even if it influences the failure and its occurrence. Finally, the progressiveness being gate voltage and temperature driven, it is shown that the defect generation probability drives the breakdown degradation after its creation. This is proven by measuring the influence on the progressiveness of a bulk bias applied during the stress of a pMOS device in the inversion regime.

引用

页码：424 / 431

页数：8

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