Deep ultraviolet light-emitting diodes using quaternary AlInGaN multiple quantum wells

被引：53

作者：

Shatalov, M ^{[1
]}

Zhang, J ^{[1
]}

Chitnis, AS ^{[1
]}

Adivarahan, V ^{[1
]}

Yang, J ^{[1
]}

Simin, G ^{[1
]}

Khan, MA ^{[1
]}

机构：

[1] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2002年 / 8卷 / 02期

关键词：

epitaxial growth; light-emitting diodes; lighting; quantum-well devices; ultraviolet generation;

D O I：

10.1109/2944.999185

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we report on the growth, fabrication, and characterization of deep ultraviolet (UV) light-emitting diodes (LEDs) with quaternary AlInGaN-AlInGaN multiple quantum wells (MQWs) in the active region. These high quality quaternary MQWs were deposited over sapphire and n-SiC substrates using a novel pulsed atomic layer epitaxy (PALE) technique. LEDs with peak emission wavelengths from 305-340 nm were fabricated and characterized. Using square geometry devices over sapphire and n-SiC substrates we studied the role of current crowding. Numerical simulation results are also provided to explain the observed current-voltage and light-emission characteristics.

引用

页码：302 / 309

页数：8

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